Crucial Technology CT51264BA1339.C16F 4GB vs Mushkin 99[2/7/4]202F 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Mushkin 99[2/7/4]202F 4GB

需要考虑的原因
Mushkin 99[2/7/4]202F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

15 13.9

测试中的平均数值
更快的写入速度，GB/s

11.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Mushkin 99[2/7/4]202F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.9 15.0
写入速度，GB/s

8.4 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Kingston 9905700-047.A00G 16GB

Kingston 9905700-047.A00G 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB