Crucial Technology CT51264BA1339.C16F 4GB vs Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

需要考虑的原因
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

报告一个错误

更快的读取速度，GB/s

16.6 13.9

测试中的平均数值
更快的写入速度，GB/s

12.9 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.9 16.6
写入速度，GB/s

8.4 12.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2251 3067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CM4X16GC3200C16K2 16GB

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AMD R5316G1609U2K 8GB

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Micron Technology 16KTF1G64AZ-1G6N1 8GB

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Samsung M393B1G70QH0-YK0 8GB

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EVGA 8GX-D4-3000-MR 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BL8G30C15U4B.8FE 8GB

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Kingston KHX318C10FR/8G 8GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB