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Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A2G43BB2-CWE 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Samsung M471A2G43BB2-CWE 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Samsung M471A2G43BB2-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
60
左右 55% 更低的延时
需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB
报告一个错误
更快的读取速度,GB/s
14.9
13.9
测试中的平均数值
更快的写入速度,GB/s
12.0
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A2G43BB2-CWE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
60
读取速度,GB/s
13.9
14.9
写入速度,GB/s
8.4
12.0
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2251
2511
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Samsung M471A2G43BB2-CWE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMV16GX4M1A2133C15 16GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A2G43BB2-CWE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Kingston 9905668-002.A00G 8GB
Kingston 99U5469-035.A00LF 4GB
Kingston KHX2133C14/16G 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMW8GX4M1D3000C16 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
报告一个错误
×
Bug description
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