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Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
比较
Crucial Technology CT51264BA1339.D16F 4GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB
总分
Crucial Technology CT51264BA1339.D16F 4GB
总分
Crucial Technology CT4G4DFS824A.M8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
更快的读取速度,GB/s
13.2
12
测试中的平均数值
更快的写入速度,GB/s
8.2
6.6
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 -63% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
24
读取速度,GB/s
13.2
12.0
写入速度,GB/s
8.2
6.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2165
1433
Crucial Technology CT51264BA1339.D16F 4GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB RAM的比较
Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
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Kingston 9965525-140.A00LF 8GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Mushkin 991586 2GB
Corsair CM4X8GE3000C15K4 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M2C3200C16 16GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Kingston KF552C40-16 16GB
Corsair CM4X8GF2400C16K4 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M474A4G43MB1-CTD 32GB
报告一个错误
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