Crucial Technology CT51264BA1339.D16F 4GB vs G Skill Intl F4-3200C16-4GVK 4GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

G Skill Intl F4-3200C16-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

17.5 13.2

测试中的平均数值
更快的写入速度，GB/s

13.7 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

G Skill Intl F4-3200C16-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

13.2 17.5
写入速度，GB/s

8.2 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2165 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston 9905678-012.A00G 8GB

Kingston 9905678-012.A00G 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Apacer Technology D22.2221ZA.001 8GB

Apacer Technology D22.2221ZA.001 8GB