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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BLM8G44C19U4B.M8FE1 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
报告一个错误
更快的读取速度,GB/s
17.9
12.1
测试中的平均数值
更快的写入速度,GB/s
16.0
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
25
读取速度,GB/s
12.1
17.9
写入速度,GB/s
8.6
16.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2045
3651
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CM4X16GC3000C15D4 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston KTP9W1-MID 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3000C15-8GVGB 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMT64GX4M4C3466C16 16GB
Samsung M393A1G40DB0-CPB 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Samsung M3 78T2863QZS-CF7 1GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2800C15-8GRK 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M471B5674QH0-YK0 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
报告一个错误
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Bug description
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