Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

报告一个错误

更快的读取速度，GB/s

15.4 12.1

测试中的平均数值
更快的写入速度，GB/s

11.9 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS8G4S26BFSD.16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 25
读取速度，GB/s

12.1 15.4
写入速度，GB/s

8.6 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information JM2666HSB-16G 16GB

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Crucial Technology BL16G26C16U4B.16FD 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4500C19-8GTZKKE 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 9965640-013.A01G 32GB

Kingston 9965640-013.A01G 32GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB