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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology CT8G4DFD8213.C16FBR2 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
34
左右 26% 更低的延时
需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
报告一个错误
更快的读取速度,GB/s
14.8
12.1
测试中的平均数值
更快的写入速度,GB/s
11.0
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
34
读取速度,GB/s
12.1
14.8
写入速度,GB/s
8.6
11.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
2652
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5663-007.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston KHX2400C15D4/16GX 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Samsung M391B5673FH0-CH9 2GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung V-GeN D4S8GL24A8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited KD48GU880-32A160T 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA851S6DJR6N-XN 4GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
报告一个错误
×
Bug description
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