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Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB

Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3200C16-16GTZSW 16GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 11% 更低的延时
G Skill Intl F4-3200C16-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZSW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 28
  • 读取速度，GB/s
    12.1 left arrow 18.2
  • 写入速度，GB/s
    8.6 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3663

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

G Skill Intl F4-3200C16-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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G Skill Intl F4-3600C16-16GTRSC 16GB
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Samsung M393B2G70BH0-CK0 16GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-4000C14-16GTZR 16GB
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Kingston XW21KG-HYD-NX 8GB
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