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Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3200C16-4GTZB 4GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
G Skill Intl F4-3200C16-4GTZB 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
30
左右 17% 更低的延时
需要考虑的原因
G Skill Intl F4-3200C16-4GTZB 4GB
报告一个错误
更快的读取速度,GB/s
17.1
12.1
测试中的平均数值
更快的写入速度,GB/s
13.0
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
30
读取速度,GB/s
12.1
17.1
写入速度,GB/s
8.6
13.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
3014
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
G Skill Intl F4-3200C16-4GTZB 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 91T2953GZ3-CF7 1GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Kingston 99U5474-022.A00LF 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Peak Electronics 256X64M-67E 2GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
PNY Electronics PNY 2GB
Panram International Corporation PUD43000C168G2NJR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information TS2GLH64V4B 16GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3000C14-8GTZR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
报告一个错误
×
Bug description
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