Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3300C16-8GTZ 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

G Skill Intl F4-3300C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3300C16-8GTZ 8GB

报告一个错误

更快的读取速度，GB/s

13.6 12.1

测试中的平均数值
更快的写入速度，GB/s

11.4 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3300C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

12.1 13.6
写入速度，GB/s

8.6 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology BLS8G4D240FSB.16FADG 8GB

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AMD R5316G1609U2K 8GB

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AMD AE34G2139U2 4GB

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Essencore Limited IM48GU48N28-GGGHM 8GB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BL8G32C16U4R.M8FE1 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston 9905403-134.A00LF 2GB

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Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB