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Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
66
左右 62% 更低的延时
更快的写入速度,GB/s
8.6
7.9
测试中的平均数值
需要考虑的原因
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
报告一个错误
更快的读取速度,GB/s
15.9
12.1
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
66
读取速度,GB/s
12.1
15.9
写入速度,GB/s
8.6
7.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2045
1877
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M395T2863QZ4-CF76 1GB
Corsair CM4X4GD3000C15K4 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology 78.CAGP7.AZC0B 8GB
A-DATA Technology DDR4 2400 16GB
Kllisre M471A1K43CB1-CTD 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Kingston HX424C15FB/8 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMSX16GX4M2A3000C16 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Transcend Information JM2666HLG-16GK 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Transcend Information TS1GSH64V4B 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43EB1-CWE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMH32GX4M2D3600C18 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK16GX4M4A2400C14 4GB
报告一个错误
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Bug description
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