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Crucial Technology CT51264BD1339.M16F 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 14% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
报告一个错误
更快的读取速度,GB/s
19.3
12.1
测试中的平均数值
更快的写入速度,GB/s
15.3
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
29
读取速度,GB/s
12.1
19.3
写入速度,GB/s
8.6
15.3
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2045
3557
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMT3020EC58E9F1333 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avexir Technologies Corporation T 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Kingston 9965516-112.A00LF 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston X75V1H-MIE 32GB
报告一个错误
×
Bug description
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