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Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
41
左右 39% 更低的延时
更快的读取速度,GB/s
12.1
8.9
测试中的平均数值
更快的写入速度,GB/s
8.6
7.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
41
读取速度,GB/s
12.1
8.9
写入速度,GB/s
8.6
7.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
2126
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB RAM的比较
A-DATA Technology DQVE1908 512MB
Crucial Technology CT51264BD160B.C16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
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G Skill Intl F4-2400C15-8GFT 8GB
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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
KingSpec KingSpec 16GB
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Kingston 9905701-029.A00G 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMK192GX4M12P3200C16 16GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X16GE2133C15S2 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
报告一个错误
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Bug description
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