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Crucial Technology CT51264BD1339.M16F 4GB
Kingston ACR26D4S9S8HJ-8 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Kingston ACR26D4S9S8HJ-8 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Kingston ACR26D4S9S8HJ-8 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
35
左右 29% 更低的延时
需要考虑的原因
Kingston ACR26D4S9S8HJ-8 8GB
报告一个错误
更快的读取速度,GB/s
15.3
12.1
测试中的平均数值
更快的写入速度,GB/s
12.6
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Kingston ACR26D4S9S8HJ-8 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
35
读取速度,GB/s
12.1
15.3
写入速度,GB/s
8.6
12.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2045
2815
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Kingston ACR26D4S9S8HJ-8 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905734-102.A00G 32GB
TwinMOS 8DHE3MN8-HATP 2GB
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A-DATA Technology DDR4 3200 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-4266C19-8GTRS 8GB
Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C
报告一个错误
×
Bug description
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