Crucial Technology CT51264BD1339.M16F 4GB vs Kingston K6VDX7-HYD 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时
更快的写入速度，GB/s

8.6 7.2

测试中的平均数值

Kingston K6VDX7-HYD 8GB

需要考虑的原因
Kingston K6VDX7-HYD 8GB

报告一个错误

更快的读取速度，GB/s

13.5 12.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Kingston K6VDX7-HYD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

12.1 13.5
写入速度，GB/s

8.6 7.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2045 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M393B2G70AH0-YH9 16GB

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Kingston KHX2133C13S4/4G 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 9905712-035.A00G 16GB

Kingston 9905712-035.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CMK128GX4M8Z2933C16 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB