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Crucial Technology CT51264BD1339.M16F 4GB
Panram International Corporation PUD43000C168G2NJR 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Panram International Corporation PUD43000C168G2NJR 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
Panram International Corporation PUD43000C168G2NJR 8GB 需要考虑的原因
Panram International Corporation PUD43000C168G2NJR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    12.1 left arrow 15.9
  • 写入速度，GB/s
    8.6 left arrow 12.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2781

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Panram International Corporation PUD43000C168G2NJR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 4133 8GB
A-DATA Technology DDR4 4133 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Kingston DDR3 1333G 2GB
Kingston DDR3 1333G 2GB
Corsair CMK64GX4M4B3333C16 16GB
Corsair CMK64GX4M4B3333C16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CM4X8GF2666C16K8 8GB
Corsair CM4X8GF2666C16K8 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
内存RAM