Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M393A2K43DB3-CWE 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 53

左右 53% 更低的延时
更快的读取速度，GB/s

12.1 10.3

测试中的平均数值
更快的写入速度，GB/s

8.6 7.7

测试中的平均数值

Samsung M393A2K43DB3-CWE 16GB

需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M393A2K43DB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 53
读取速度，GB/s

12.1 10.3
写入速度，GB/s

8.6 7.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2045 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) PSD416G26662S 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Team Group Inc. TEAMGROUP-ED4-2400 16GB

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Avant Technology W641GU42J7240NB 8GB

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Micron Technology 8ATF1G64HZ-2G3E2 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

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Kingston 99U5428-040.A00LF 4GB

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Kingston 9905625-098.A00G 16GB

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

A-DATA Technology DDR3 1600 4GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB