Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M471A1K1KBB0-CPB 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 4% 更低的延时
更快的读取速度，GB/s

12.1 11.7

测试中的平均数值
更快的写入速度，GB/s

8.6 5.5

测试中的平均数值

Samsung M471A1K1KBB0-CPB 8GB

需要考虑的原因
Samsung M471A1K1KBB0-CPB 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A1K1KBB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 26
读取速度，GB/s

12.1 11.7
写入速度，GB/s

8.6 5.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, , CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 1771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS824A.M8FF 4GB

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Kingston KHX3466C19D4/8G 8GB

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SpecTek Incorporated ?????????????????? 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M393A2K43BB1-CPB 16GB

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Kingston 9965662-016.A00G 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Corsair CML8GX3M2A1600C9 4GB

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Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited KD4AGU880-36A180X 16GB

Essencore Limited KD4AGU880-36A180X 16GB