Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M471A1K43DB1-CTD 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

15.7 12.1

测试中的平均数值
更快的写入速度，GB/s

11.8 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A1K43DB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

12.1 15.7
写入速度，GB/s

8.6 11.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 2767

RAM Latency Calculator

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最新比较

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AMD AE34G1601U1 4GB

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Kingston KHX2133C13S4/4G 4GB

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Kingston KHX2400C11D3/4GX 4GB

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Samsung M378A5143DB0-CPB 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology BL8G32C16S4B.M8FE1 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB