Crucial Technology CT51264BD1339.M16F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 25

左右 -32% 更低的延时
更快的读取速度，GB/s

18.7 12.1

测试中的平均数值
更快的写入速度，GB/s

14.2 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 19
读取速度，GB/s

12.1 18.7
写入速度，GB/s

8.6 14.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology GD2.111881.002 4GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

Kingston KHX3466C16D4/16GX 16GB

Kingston KHX3466C16D4/16GX 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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SK Hynix HMA41GR7MFR8N-TF 8GB