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Crucial Technology CT51264BD160B.C16F 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Crucial Technology CT51264BD160B.C16F 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 41
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 37
  • 读取速度，GB/s
    13.9 left arrow 16.9
  • 写入速度，GB/s
    9.7 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 3170

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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