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Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD8GX4M2B3466C18 4GB

Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMD8GX4M2B3466C18 4GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Corsair CMD8GX4M2B3466C18 4GB 需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 41
    左右 -105% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD8GX4M2B3466C18 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 20
  • 读取速度，GB/s
    13.9 left arrow 19.0
  • 写入速度，GB/s
    9.7 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2939

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Corsair CMD8GX4M2B3466C18 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMD16GX4M4B3000C15 4GB
Corsair CMD16GX4M4B3000C15 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD8GX4M2B3466C18 4GB
Corsair CMD8GX4M2B3466C18 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
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Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM