Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMK16GX4M2B3466C16 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMK16GX4M2B3466C16 8GB

Corsair CMK16GX4M2B3466C16 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Corsair CMK16GX4M2B3466C16 8GB

需要考虑的原因
Corsair CMK16GX4M2B3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

19.7 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK16GX4M2B3466C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

13.9 19.7
写入速度，GB/s

9.7 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Samsung M3 78T5663EH3-CF7 2GB

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Micron Technology AFLD48VH1P 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Kingston KHX4133C19D4/8GX 8GB

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Kingston HP669238-071-HYC 4GB

Samsung M393A1G40DB0-CPB 8GB

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Kingston 9905403-156.A00LF 2GB

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Kingston 9905744-027.A00G 16GB