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Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMSX32GX4M2A3000C16 16GB

Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMSX32GX4M2A3000C16 16GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Corsair CMSX32GX4M2A3000C16 16GB 需要考虑的原因
Corsair CMSX32GX4M2A3000C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMSX32GX4M2A3000C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 31
  • 读取速度，GB/s
    13.9 left arrow 17.3
  • 写入速度，GB/s
    9.7 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 3359

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Corsair CMSX32GX4M2A3000C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Super Talent F3200UA8G 8GB
Super Talent F3200UA8G 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMSX32GX4M2A3000C16 16GB
Corsair CMSX32GX4M2A3000C16 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston 9965589-031.D01G 2GB
Kingston 9965589-031.D01G 2GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3200C16-16GTZKW 16GB
G Skill Intl F4-3200C16-16GTZKW 16GB
内存RAM