Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology BLE4G4D30AEEA.K8FE 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

需要考虑的原因
Crucial Technology BLE4G4D30AEEA.K8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

19.6 13.9

测试中的平均数值
更快的写入速度，GB/s

15.8 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

13.9 19.6
写入速度，GB/s

9.7 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3252

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-4400C16-8GVK 8GB

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Nanya Technology M2F4G64CB8HB9N-CG 4GB

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Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

G Skill Intl F4-2400C16-8GFXR 8GB

G Skill Intl F4-2400C16-8GFXR 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9905701-006.A00G 16GB

Kingston 9905701-006.A00G 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Crucial Technology CB8GS2400.C8JT 8GB

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Kingston 99U5678-029.A00G 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB