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Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology BLS4G4D26BFSB.8FB 4GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
Crucial Technology BLS4G4D26BFSB.8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
更快的读取速度,GB/s
13.9
13
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FB 4GB
报告一个错误
低于PassMark测试中的延时,ns
39
41
左右 -5% 更低的延时
更快的写入速度,GB/s
13.5
9.7
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
39
读取速度,GB/s
13.9
13.0
写入速度,GB/s
9.7
13.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2366
2808
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Transcend Information TS2GSH64V6B 16GB
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Smart Modular SH564128FH8NZQNSCG 4GB
SK Hynix GKE160UD102408-2400 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Crucial Technology BLS8G4D240FSBK.8FD 8GB
Kingston HX432C15PB3/16G 16GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
报告一个错误
×
Bug description
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