Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology BLT4G4D26AFTA.8FADG 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

16.5 13.9

测试中的平均数值
更快的写入速度，GB/s

12.6 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

13.9 16.5
写入速度，GB/s

9.7 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

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Apacer Technology 76.C102G.D170B 8GB

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Crucial Technology CT102464BF160B.C16 8GB

Corsair CMG16GX4M2E3200C16 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M386A8K40BM1-CRC 64GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB