Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology CB8GS2400.C8D 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 89

左右 54% 更低的延时
更快的读取速度，GB/s

13.9 13.6

测试中的平均数值
更快的写入速度，GB/s

9.7 6.8

测试中的平均数值

Crucial Technology CB8GS2400.C8D 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CB8GS2400.C8D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 89
读取速度，GB/s

13.9 13.6
写入速度，GB/s

9.7 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 1518

RAM Latency Calculator

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RAM 2

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最新比较

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CMW16GX4M2D3600C18 8GB

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Kingston 9905403-090.A01LF 4GB

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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

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Crucial Technology CT51264BF160BJ.C8F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N