Crucial Technology CT51264BD160B.C16F 4GB vs Kingston 9905702-007.A00G 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Kingston 9905702-007.A00G 8GB

Kingston 9905702-007.A00G 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 12.8

测试中的平均数值
更快的写入速度，GB/s

9.7 7.2

测试中的平均数值

Kingston 9905702-007.A00G 8GB

需要考虑的原因
Kingston 9905702-007.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 41

左右 -3% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Kingston 9905702-007.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 40
读取速度，GB/s

13.9 12.8
写入速度，GB/s

9.7 7.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 1785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 9905702-007.A00G 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Samsung M378T5663QZ3-CF7 2GB

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Micron Technology 16ATF1G64AZ-2G3A2 8GB

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Samsung M393B1G70QH0-YK0 8GB

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Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

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Kingston 9905663-030.A00G 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

G Skill Intl F4-3733C17-4GVK 4GB

G Skill Intl F4-3733C17-4GVK 4GB