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Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905702-029.A00G 8GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs Kingston 9905702-029.A00G 8GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
Kingston 9905702-029.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
73
左右 44% 更低的延时
更快的写入速度,GB/s
9.7
7.2
测试中的平均数值
需要考虑的原因
Kingston 9905702-029.A00G 8GB
报告一个错误
更快的读取速度,GB/s
14.3
13.9
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905702-029.A00G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
73
读取速度,GB/s
13.9
14.3
写入速度,GB/s
9.7
7.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2366
1650
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Kingston 9905702-029.A00G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2666C18-8GFX 8GB
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited KD4AGS88A-26N1600 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Avant Technology J644GU44J2320NF 32GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Kingston KY7N41-MID 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
Samsung M391B5673FH0-CH9 2GB
INTENSO 5641152 4GB
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C14-16GTZKY 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Good Wealth Technology Ltd. KETECH 8GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung DDR3 8GB 1600MHz 8GB
Kingston 99U5712-009.A00G 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Kllisre DDR4-8GB 8GB
报告一个错误
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Bug description
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