Crucial Technology CT51264BD160B.C16F 4GB vs Kingston 9905713-028.A00G 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Kingston 9905713-028.A00G 8GB

需要考虑的原因
Kingston 9905713-028.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

16.3 13.9

测试中的平均数值
更快的写入速度，GB/s

12.3 9.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Kingston 9905713-028.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

13.9 16.3
写入速度，GB/s

9.7 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2366 3111

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire CL14-16-16 D4-3000 4GB

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PNY Electronics PNY 2GB

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V-GEN D4H4GL30A8TS5 4GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3200C14-16GTZSK 16GB

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

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Samsung M395T2863QZ4-CF76 1GB

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Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB