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Crucial Technology CT51264BD160B.C16F 4GB
Kingston MSI24D4S7D8MH-16 16GB

Crucial Technology CT51264BD160B.C16F 4GB vs Kingston MSI24D4S7D8MH-16 16GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.7 left arrow 9.3
    测试中的平均数值
Kingston MSI24D4S7D8MH-16 16GB 需要考虑的原因
Kingston MSI24D4S7D8MH-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 41
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Kingston MSI24D4S7D8MH-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 35
  • 读取速度，GB/s
    13.9 left arrow 14.4
  • 写入速度，GB/s
    9.7 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2495

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Kingston MSI24D4S7D8MH-16 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
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Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
DSL Memory D4SS12082SH21A-A 8GB
DSL Memory D4SS12082SH21A-A 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
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Kingston 9965516-430.A00G 16GB
Apacer Technology 78.C2GF2.AU00B 8GB
Apacer Technology 78.C2GF2.AU00B 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
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Elpida EBJ17RG4EFWA-DJ-F 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM