Crucial Technology CT51264BD160B.C16F 4GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Lexar Co Limited LD4BU008G-H3200ULH 8GB

需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

20.6 13.9

测试中的平均数值
更快的写入速度，GB/s

14.7 9.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

13.9 20.6
写入速度，GB/s

9.7 14.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2366 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Samsung M391B1G73QH0-YK0 8GB

Samsung M391B1G73QH0-YK0 8GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905625-075.A00G 16GB

Kingston 9905625-075.A00G 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Patriot Memory (PDP Systems) PSD48G24002 8GB

Patriot Memory (PDP Systems) PSD48G24002 8GB