Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 11.5

测试中的平均数值
更快的写入速度，GB/s

9.7 9.1

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.9 11.5
写入速度，GB/s

9.7 9.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 1881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Kingston 9905678-007.A00G 8GB

Kingston 9905678-007.A00G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingston KF3600C16D4/16GX 16GB

Kingston KF3600C16D4/16GX 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Apacer Technology D12.2356WS.001 8GB

Apacer Technology D12.2356WS.001 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

SK Hynix HMA851S6JJR6N-VK 4GB

SK Hynix HMA851S6JJR6N-VK 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB