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Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology 8ATF1G64HZ-2G6E3 8GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Micron Technology 8ATF1G64HZ-2G6E3 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E3 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 41
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 35
  • 读取速度，GB/s
    13.9 left arrow 15.0
  • 写入速度，GB/s
    9.7 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2841

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
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Golden Empire 2GB DDR2 800 CAS=4 2GB
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A-DATA Technology DDR3 1600 2OZ 4GB
A-DATA Technology DDR3 1600 2OZ 4GB
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Swissbit MEU25664D6BC2EP-30 2GB
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Swissbit MEU25664D6BC2EP-30 2GB
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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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G Skill Intl F4-4800C19-8GTZRC 8GB
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Kingston 9905403-011.A03LF 2GB
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Kingston 99P5471-011.A00LF 4GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
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Samsung M393B2G70BH0-YK0 16GB
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内存RAM
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A-DATA Technology AO1P32MC8T1-BW3S 8GB
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Kingston KVT8FP-HYC 4GB
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内存RAM