Crucial Technology CT51264BD160B.C16F 4GB vs Micron Technology TEAMGROUP-UD4-3000 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Micron Technology TEAMGROUP-UD4-3000 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

17 13.9

测试中的平均数值
更快的写入速度，GB/s

11.9 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology TEAMGROUP-UD4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

13.9 17.0
写入速度，GB/s

9.7 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston KHX2666C16D4/32GX 32GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

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SK Hynix HMA82GU6CJR8N-XN 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS4G4D240FSC.8FBR2 4GB