Crucial Technology CT51264BD160B.C16F 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Crucial Technology CT51264BD160B.C16F 4GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13.5

测试中的平均数值
更快的写入速度，GB/s

9.7 8.3

测试中的平均数值

Panram International Corporation PUD42400C154G2NJK 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

13.9 13.5
写入速度，GB/s

9.7 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 2157

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R534G1601U1S-UO 4GB

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Kingston KHX3200C16D4/16GX 16GB

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AMD R5S38G1601U2S 8GB

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A-DATA Technology DDR3 1600 4GB

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Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kllisre DDR4-8GB 8GB

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Samsung M471B5773DH0-CK0 2GB

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Golden Empire CL18-22-22 D4-3600 16GB

Samsung M471B5273DH0-CK0 4GB

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G Skill Intl F4-2400C16-16GFT 16GB