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Crucial Technology CT51264BD160B.C16F 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB

Crucial Technology CT51264BD160B.C16F 4GB vs Patriot Memory (PDP Systems) PSD44G266682 4GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Patriot Memory (PDP Systems) PSD44G266682 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G266682 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 29
  • 读取速度，GB/s
    13.9 left arrow 17.3
  • 写入速度，GB/s
    9.7 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2832

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Patriot Memory (PDP Systems) PSD44G266682 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905664-010.A00G 4GB
Kingston 9905664-010.A00G 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Kingston KTP9W1-MID 16GB
Kingston KTP9W1-MID 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905625-076.A00G 8GB
Kingston 9905625-076.A00G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM