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Crucial Technology CT51264BD160B.C16F 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
67
左右 39% 更低的延时
更快的写入速度,GB/s
9.7
9.0
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
报告一个错误
更快的读取速度,GB/s
16.7
13.9
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
67
读取速度,GB/s
13.9
16.7
写入速度,GB/s
9.7
9.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2366
1879
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393B1K70QB0-CK0 8GB
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Samsung M471B5173QH0-YK0 4GB
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Kingston 99U5595-005.A00LF 2GB
Kingston 9905598-026.A00G 16GB
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Patriot Memory (PDP Systems) 3866 C18 Series 8GB
报告一个错误
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Bug description
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