Crucial Technology CT51264BF160BJ.C8F 4GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

差异规格评论

差异

Crucial Technology CT51264BF160BJ.C8F 4GB

需要考虑的原因
Crucial Technology CT51264BF160BJ.C8F 4GB

报告一个错误

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 39

左右 -3% 更低的延时
更快的读取速度，GB/s

14.2 12.5

测试中的平均数值
更快的写入速度，GB/s

9.8 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160BJ.C8F 4GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 38
读取速度，GB/s

12.5 14.2
写入速度，GB/s

8.1 9.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2096 2451

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung M393B5270CH0-CH9 4GB

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Corsair CMG64GX4M2D3600C18 32GB

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Hyundai Inc AR32C16S8K2HU416R 8GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingston MSI24D4S7S8MH-8 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston MSI24D4U7D8MD-16 16GB

Kingston MSI24D4U7D8MD-16 16GB

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB