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Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分
star star star star star
Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

总分
star star star star star
Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异 规格 评论

差异

Crucial Technology CT8G4SFRA266.C4FE 8GB 需要考虑的原因
Crucial Technology CT8G4SFRA266.C4FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 39
    左右 10% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 9.1
    测试中的平均数值
Crucial Technology CB8GS2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CB8GS2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 39
  • 读取速度，GB/s
    15.3 left arrow 14.0
  • 写入速度，GB/s
    10.0 left arrow 9.1
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2559 left arrow 2221

Crucial Technology CT8G4SFRA266.C4FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CB8GS2666.C8ET 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
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内存RAM