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Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43CB1-CTD 8GB
比较
Crucial Technology CT8G4SFRA266.C8FD1 8GB vs Samsung M471A1K43CB1-CTD 8GB
总分
Crucial Technology CT8G4SFRA266.C8FD1 8GB
总分
Samsung M471A1K43CB1-CTD 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FD1 8GB
报告一个错误
需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
36
左右 -9% 更低的延时
更快的读取速度,GB/s
15.8
15
测试中的平均数值
更快的写入速度,GB/s
11.9
10.8
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43CB1-CTD 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
33
读取速度,GB/s
15.0
15.8
写入速度,GB/s
10.8
11.9
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2700
2824
Crucial Technology CT8G4SFRA266.C8FD1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43CB1-CTD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-001.A01LF 2GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Essencore Limited KD48GU881-26N190D 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Samsung M393A4K40BB0-CPB 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
SK Hynix HMT325S6BFR8C-H9 2GB
AMD R748G2400S2S 8GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3200C15-16GTZKO 16GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Crucial Technology CT51264BD160B.C16F 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KHX3600C17D4/16GX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Samsung M378B5173BH0-CH9 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Heoriady HX2666CX15D4/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
报告一个错误
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Bug description
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