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Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43DB1-CTD 8GB
比较
Crucial Technology CT8G4SFRA266.C8FD1 8GB vs Samsung M471A1K43DB1-CTD 8GB
总分
Crucial Technology CT8G4SFRA266.C8FD1 8GB
总分
Samsung M471A1K43DB1-CTD 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FD1 8GB
报告一个错误
需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
36
左右 -3% 更低的延时
更快的读取速度,GB/s
15.7
15
测试中的平均数值
更快的写入速度,GB/s
11.8
10.8
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43DB1-CTD 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
35
读取速度,GB/s
15.0
15.7
写入速度,GB/s
10.8
11.8
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2700
2767
Crucial Technology CT8G4SFRA266.C8FD1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43DB1-CTD 8GB RAM的比较
Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston XW21KG-MIE2 8GB
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G Skill Intl F4-2666C18-4GFX 4GB
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Kingston KHX2400C15D4/8G 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X8GD3000C16K4D 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Apacer Technology 78.CAGPP.ARW0B 8GB
报告一个错误
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Bug description
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