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Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

总分
star star star star star
Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

差异 规格 评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB 需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 62
    左右 13% 更低的延时
Samsung V-GeN D4S4GL30A16TS5 4GB 需要考虑的原因
Samsung V-GeN D4S4GL30A16TS5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.0 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung V-GeN D4S4GL30A16TS5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 62
  • 读取速度，GB/s
    9.4 left arrow 16.7
  • 写入速度，GB/s
    6.7 left arrow 7.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1929 left arrow 1808

Elpida EBJ17RG4EFWA-DJ-F 16GB RAM的比较

Elpida EBJ17RG4EAFD-DJ-F 16GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 99U5663-003.A00G 16GB
Kingston 99U5663-003.A00G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905701-011.A00G 16GB
Kingston 9905701-011.A00G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C15-16GTZSK 16GB
G Skill Intl F4-3200C15-16GTZSK 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM