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Samsung M3 78T5663RZ3-CE6 2GB
Samsung M471A1G43DB0-0-B 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Samsung M471A1G43DB0-0-B 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.8
    测试中的平均数值
Samsung M471A1G43DB0-0-B 8GB 需要考虑的原因
Samsung M471A1G43DB0-0-B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 60
    左右 -88% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M471A1G43DB0-0-B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 32
  • 读取速度，GB/s
    4,595.2 left arrow 13.8
  • 写入速度，GB/s
    2,168.2 left arrow 6.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1844

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Samsung M471A1G43DB0-0-B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Essencore Limited KD48GU880-32N220T 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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TwinMOS 8DPT5MK8-TATP 2GB
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Corsair CMK32GX4M2Z3200C16 16GB
内存RAM
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
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A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM
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内存RAM
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Kingston 9965516-112.A00LF 16GB
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Kingston KF2666C16S4/16G 16GB
内存RAM
Kingston ACR16D3LS1NBG/4G 4GB
Kingston ACR16D3LS1NBG/4G 4GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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