Samsung M3 78T5663RZ3-CE6 2GB vs Samsung M3 78T5663DZ3-CE6 2GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Samsung M3 78T5663DZ3-CE6 2GB

Samsung M3 78T5663DZ3-CE6 2GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 4

测试中的平均数值
更快的写入速度，GB/s

2,168.2 1,850.1

测试中的平均数值

Samsung M3 78T5663DZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663DZ3-CE6 2GB

报告一个错误

低于PassMark测试中的延时，ns

55 60

左右 -9% 更低的延时

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663DZ3-CE6 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

60 55
读取速度，GB/s

4,595.2 4,102.0
写入速度，GB/s

2,168.2 1,850.1
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

941 634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A5244CB0-CTD 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663DZ3-CE6 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C16-16GRS 16GB

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Kingston ACR16D3LS1KNG/8G 8GB

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Kingston 9965525-155.A00LF 8GB

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Corsair CMW8GX4M1Z3600C18 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CT8G4SFS632A.C4FE 8GB

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AMD R7S44G2606U1S 4GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Smart Modular SF4642G8CK8IEHLSBG 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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Golden Empire CL16-16-16 D4-2400 8GB

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