RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Samsung M471A1G44AB0-CWE 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB vs Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异 规格 评论

差异

Crucial Technology CT8G4SFS832A.M8FRS 8GB 需要考虑的原因
Crucial Technology CT8G4SFS832A.M8FRS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 10.9
    测试中的平均数值
Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 55
    左右 -10% 更低的延时

规格

完整的技术规格清单
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Samsung M471A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    55 left arrow 50
  • 读取速度，GB/s
    16.4 left arrow 15.3
  • 写入速度，GB/s
    13.1 left arrow 10.9
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2612 left arrow 2512

Crucial Technology CT8G4SFS832A.M8FRS 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GRKB 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD64GX4M8X4000C19 8GB
Corsair CMD64GX4M8X4000C19 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Avant Technology W641GU67J5213N8 8GB
Avant Technology W641GU67J5213N8 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kllisre 99P54280002.A00LF 8GB
Kllisre 99P54280002.A00LF 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM