Elpida EBE21UE8ACUA-8G-E 2GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

总分

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

总分

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Elpida EBE21UE8ACUA-8G-E 2GB

需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,001.3 12.4

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 58

左右 -53% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Elpida EBE21UE8ACUA-8G-E 2GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 38
读取速度，GB/s

4,796.5 14.7
写入速度，GB/s

2,001.3 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

768 2908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Mushkin 99[2/7/4]189F 4GB

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Unifosa Corporation HU564404EP0200 4GB

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Corsair CMK64GX4M2D3000C16 32GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology CT8G4SFD824A.M16FE1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240