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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-3866C18-8GTZSW 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
G Skill Intl F4-3866C18-8GTZSW 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
28
左右 -56% 更低的延时
更快的读取速度,GB/s
20.9
12.4
测试中的平均数值
更快的写入速度,GB/s
17.0
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
18
读取速度,GB/s
12.4
20.9
写入速度,GB/s
9.6
17.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
3668
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Kingston X6TCK6-MIE 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3866C18-8GTZSW 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX3200C20S4/8G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3733C17-8GTZSW 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston XW21KG-MIE-NX 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C14-16GFX 16GB
Kingston 9905469-124.A00LF 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Kingston KN2M64-ETB 8GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143EB0-CPB 4GB
报告一个错误
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Bug description
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